2GUFSiO2-10, Graphene on Ultra-Flat Thermal SiO2, 2 layers
Graphene on Ultra-Flat Thermal SiO2 Substrate
Characteristics
- Four thicknesses of CVD graphene
- Available in either 1, 2, 3-5 or 6-8 layers
- TEM Substrate
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5 mm x 5 mm.
- Graphene coverage of the TEM grid is better than 75%
€620.10
SKU
EMS_2GUFSiO2-10
Specifications
Type |
Thickness of the Graphene |
Transparency |
TEM Grid/AFM Substrate | Support Film |
| 1 Layer | ~0.35 nm | ~96.4% | N/A | Ultra-Flat Silicon |
| 2 Layers | ~0.7 nm | ~92.7% | N/A | Ultra-Flat Silicon |
| 3-5 Layers | 1.0-1.7 nm | ~85.8-90.4% | N/A | Ultra-Flat Silicon |
| 6-8 Layers | 2.1-2.8 nm | ~78.5-83.2% | N/A | Ultra-Flat Silicon |
| Manufacturer | Electron Microscopy Sciences |
|---|---|
| Size / Rxns Number: | No |
| Protocol & Manual | No |
| Technical Tips | No |
Write Your Own Review